DocumentCode :
2863984
Title :
Microwave GaAs power FETs
Author :
Belohoubek, E.
Author_Institution :
RCA Laboratories, Princeton, NJ, USA
Volume :
XX
fYear :
1977
fDate :
16-18 Feb. 1977
Firstpage :
177
Lastpage :
177
Keywords :
Bandwidth; Frequency; Gallium arsenide; Laboratories; Microwave FETs; Microwave devices; Noise generators; Pulse modulation; Solid state circuits; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1977 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1977.1155733
Filename :
1155733
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2863984
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