Title :
Breakdown voltage of AlGaAs/InGaAs HEMT submitted to life-tests in impact ionization regime
Author :
Lambert, B. ; Malbert, N. ; Labat, N. ; Touboul, A. ; Huguet, P.
Author_Institution :
ENSERB, Bordeaux I Univ., Talence, France
Abstract :
The P-HEMT technology under test is widely used in telecommunications from Ku to Ka-band for medium power amplification. In this operating regime, the impact ionization mechanism is present and its influence on the long-term stability of devices is not well known. In this work, we have studied the influence of the impact ionization and thermal stresses on DC electrical characteristics and their temperature dependence. The dynamic electrical vehicle (DEC) under test is based on an AlGaAs/InGaAs P-HEMT with a delta doped layer and a single gate recess
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; life testing; semiconductor device breakdown; semiconductor device testing; thermal stresses; AlGaAs-InGaAs; AlGaAs/InGaAs PHEMT; DC electrical characteristics; breakdown voltage; impact ionization; life testing; stability; temperature dependence; thermal stress; Electric variables; Electric vehicles; HEMTs; Impact ionization; Indium gallium arsenide; Stability; Temperature dependence; Testing; Thermal stresses; Vehicle dynamics;
Conference_Titel :
GaAs Reliability Workshop, 2000. Proceedings
Conference_Location :
Seattle, WA
Print_ISBN :
0-7908-0102-7
DOI :
10.1109/GAASRW.2000.902416
