Breakdown voltage of AlGaAs/InGaAs HEMT submitted to life-tests in impact ionization regime

Author

Lambert, B. ; Malbert, N. ; Labat, N. ; Touboul, A. ; Huguet, P.

Author_Institution

ENSERB, Bordeaux I Univ., Talence, France

fYear

2000

fDate

2000

Firstpage

3

Lastpage

19

Abstract

The P-HEMT technology under test is widely used in telecommunications from Ku to Ka-band for medium power amplification. In this operating regime, the impact ionization mechanism is present and its influence on the long-term stability of devices is not well known. In this work, we have studied the influence of the impact ionization and thermal stresses on DC electrical characteristics and their temperature dependence. The dynamic electrical vehicle (DEC) under test is based on an AlGaAs/InGaAs P-HEMT with a delta doped layer and a single gate recess

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; life testing; semiconductor device breakdown; semiconductor device testing; thermal stresses; AlGaAs-InGaAs; AlGaAs/InGaAs PHEMT; DC electrical characteristics; breakdown voltage; impact ionization; life testing; stability; temperature dependence; thermal stress; Electric variables; Electric vehicles; HEMTs; Impact ionization; Indium gallium arsenide; Stability; Temperature dependence; Testing; Thermal stresses; Vehicle dynamics;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs Reliability Workshop, 2000. Proceedings

Conference_Location

Seattle, WA

Print_ISBN

0-7908-0102-7

Type

conf

DOI

10.1109/GAASRW.2000.902416

Filename

902416