DocumentCode
2864118
Title
Dielectrically isolated ICs made with preferential etching
Author
Barth, P. ; Angell, J.
Author_Institution
Stanford University, Stanford, CA, USA
Volume
XX
fYear
1977
fDate
16-18 Feb. 1977
Firstpage
220
Lastpage
221
Keywords
Bipolar transistors; Chemical processes; Dielectrics and electrical insulation; Doping profiles; Etching; Laboratories; Lapping; Semiconductor films; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1977 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1977.1155740
Filename
1155740
Link To Document