• DocumentCode
    2864151
  • Title

    A new BAWR (bulk acoustic wave resonator) structure for near zero TCF (temperature coefficient of frequency)

  • Author

    Son, Sang Uk ; Song, Insang ; Shin, Jeashik ; Park, Ho-Soo ; Cui, Jing ; Kim, Chul-Soo ; Kim, Duck-Hwan

  • Author_Institution
    Future IT Research Center, Samsung Advanced Institute of Technology (SAIT), Young-in, Gyeong-gi 446-712, Republic of Korea
  • fYear
    2012
  • fDate
    17-22 June 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A BAWR (bulk acoustic wave resonator) is an essential component of RF filters and duplexers in wireless communication devices. The BAWR consists of a piezoelectric layer sandwiched between bottom and top electrodes. Its resonance frequency shifts as an environment temperature changes, normally ranging −25∼−30 ppm/°C, which is referred to TCF (temperature coefficient of frequency). A large TCF value reduces the gap between adjacent bands and gives rise to interference in their operation. To overcome this problem, a low TCF value is required as keeping carrier bandwidth, high Q, and high kt2. In this work, a new BAWR structure with SiO2/SiN layers enabled TCF −0.3∼−7.8 ppm/°C, Q 2400, and kt2 5.4%, respectively. This BAWR has been applied to LTE Band-7 and Band-25 filters.
  • Keywords
    Electrodes; Resonant frequency; Resonator filters; Silicon; Silicon compounds; Temperature; Temperature measurement; Acoustic waves; interference; narrow band; resonator filters; temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
  • Conference_Location
    Montreal, QC, Canada
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4673-1085-7
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2012.6259452
  • Filename
    6259452