DocumentCode :
2864151
Title :
A new BAWR (bulk acoustic wave resonator) structure for near zero TCF (temperature coefficient of frequency)
Author :
Son, Sang Uk ; Song, Insang ; Shin, Jeashik ; Park, Ho-Soo ; Cui, Jing ; Kim, Chul-Soo ; Kim, Duck-Hwan
Author_Institution :
Future IT Research Center, Samsung Advanced Institute of Technology (SAIT), Young-in, Gyeong-gi 446-712, Republic of Korea
fYear :
2012
fDate :
17-22 June 2012
Firstpage :
1
Lastpage :
3
Abstract :
A BAWR (bulk acoustic wave resonator) is an essential component of RF filters and duplexers in wireless communication devices. The BAWR consists of a piezoelectric layer sandwiched between bottom and top electrodes. Its resonance frequency shifts as an environment temperature changes, normally ranging −25∼−30 ppm/°C, which is referred to TCF (temperature coefficient of frequency). A large TCF value reduces the gap between adjacent bands and gives rise to interference in their operation. To overcome this problem, a low TCF value is required as keeping carrier bandwidth, high Q, and high kt2. In this work, a new BAWR structure with SiO2/SiN layers enabled TCF −0.3∼−7.8 ppm/°C, Q 2400, and kt2 5.4%, respectively. This BAWR has been applied to LTE Band-7 and Band-25 filters.
Keywords :
Electrodes; Resonant frequency; Resonator filters; Silicon; Silicon compounds; Temperature; Temperature measurement; Acoustic waves; interference; narrow band; resonator filters; temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
ISSN :
0149-645X
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2012.6259452
Filename :
6259452
Link To Document :
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