Title :
Looking for an acceleration law for the high-field degradation of AlGaAs/GaAs power HFETs: can MOSFETs help?
Author :
Menozzi, R. ; Sozzi, G. ; Tediosi, E. ; Dieci, D. ; Lanzieri, C. ; Canali, C.
Author_Institution :
Dipt. di Ingegneria dell´´Inf., Parma Univ., Italy
Abstract :
This works shows high-field degradation data measured on AlGaAs/GaAs HFETs under different stress bias conditions. The aim is at extracting indications on the relevant factors accelerating the gradual degradation of the HFETs under hot-electron and impact ionization conditions. Popular acceleration laws used for MOSFETs are applied, and numerical simulations are used as an aid for the physical interpretation of the results
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; hot carriers; impact ionisation; power field effect transistors; semiconductor device breakdown; AlGaAs-GaAs; MOSFET; acceleration law; high-field degradation; hot-electrons; impact ionization; numerical simulations; power HFET; stress bias; Acceleration; Data mining; Degradation; Gallium arsenide; HEMTs; Impact ionization; MODFETs; MOSFETs; Numerical simulation; Stress measurement;
Conference_Titel :
GaAs Reliability Workshop, 2000. Proceedings
Conference_Location :
Seattle, WA
Print_ISBN :
0-7908-0102-7
DOI :
10.1109/GAASRW.2000.902424
