DocumentCode
2864194
Title
Reliability life tests of E/D self-aligned gate MESFET process
Author
Yang, Xinxing ; Ersland, Peter
Author_Institution
Eng. & Technol., Tyco Electron., Lowell, MA, USA
fYear
2000
fDate
2000
Firstpage
117
Lastpage
135
Abstract
We present details of the latest constant stress life test (CSLT) results from reliability tests of the self-aligned gate MESFET E/D process, and make a comparison of the reliability predictions from CSLT and step stress life tests (SSLT)
Keywords
Schottky gate field effect transistors; life testing; semiconductor device reliability; E/D self-aligned gate MESFET process; constant stress life test; reliability life tests; step stress life test; Automatic testing; Degradation; Electronic equipment testing; FETs; Life testing; MESFETs; Performance evaluation; Stress measurement; Temperature; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
GaAs Reliability Workshop, 2000. Proceedings
Conference_Location
Seattle, WA
Print_ISBN
0-7908-0102-7
Type
conf
DOI
10.1109/GAASRW.2000.902425
Filename
902425
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