Title :
Reliability life tests of E/D self-aligned gate MESFET process
Author :
Yang, Xinxing ; Ersland, Peter
Author_Institution :
Eng. & Technol., Tyco Electron., Lowell, MA, USA
Abstract :
We present details of the latest constant stress life test (CSLT) results from reliability tests of the self-aligned gate MESFET E/D process, and make a comparison of the reliability predictions from CSLT and step stress life tests (SSLT)
Keywords :
Schottky gate field effect transistors; life testing; semiconductor device reliability; E/D self-aligned gate MESFET process; constant stress life test; reliability life tests; step stress life test; Automatic testing; Degradation; Electronic equipment testing; FETs; Life testing; MESFETs; Performance evaluation; Stress measurement; Temperature; Thermal stresses;
Conference_Titel :
GaAs Reliability Workshop, 2000. Proceedings
Conference_Location :
Seattle, WA
Print_ISBN :
0-7908-0102-7
DOI :
10.1109/GAASRW.2000.902425
