Wide range 40-GHz Passive Mode-Locking operation of an AlGaInAs 1.55-µm Strained Quantum Well laser

Author

Javaloyes, J. ; Hou, L. ; Stolarz, P. ; Green, R.P. ; Ironside, C.N. ; Sorel, Marc ; Arnold, J.M. ; Bryce, A.C. ; Balle, S.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK

fYear

2009

fDate

14-19 June 2009

Firstpage

1

Lastpage

1

Abstract

We develop a comprehensive theoretical description of passive mode-locked semiconductor lasers based on a coarse grained time-domain approach. Under the approximation of intraband quasi equilibrium, our model accounts for the dispersion of gain, absorption and refractive index, nonlinear gain saturation from ultrafast processes, self-phase modulation, and spontaneous emission noise. We compare the predictions of our model with the perforamances of a quasi-40-GHz passively mode-locked AlGalnAs 1.55-m Strained Quantum Well laser.

Keywords

aluminium compounds; gallium compounds; indium compounds; laser mode locking; quantum well lasers; semiconductor lasers; AlGaInAs; frequency 40 GHz; gain absorption; gain dispersion; intraband quasi equilibrium; nonlinear gain saturation; passive mode-locking; refractive index; self-phase modulation; semiconductor lasers; spontaneous emission noise; strained quantum well laser; wavelength 1.55 mum; Absorption; Laser mode locking; Laser noise; Laser theory; Quantum well lasers; Refractive index; Semiconductor device noise; Semiconductor lasers; Spontaneous emission; Time domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-4079-5

Electronic_ISBN

978-1-4244-4080-1

Type

conf

DOI

10.1109/CLEOE-EQEC.2009.5196429

Filename

5196429