Title :
A MOS LSI capacitive keyboard interface chip
Author :
Katz, Gil ; Baker, L. ; Tu, Guojie
Author_Institution :
Xerox Corp., El Segundo, CA, USA
Abstract :
The design of an NMOS silicon gate LSI device that senses capacitive keys directly and interfaces with a micro-processor will be discussed. Standard N-channel silicon gate technology was used to fabricate the LSI.
Keywords :
Capacitance; Capacitors; Digital filters; Hysteresis; Keyboards; Large scale integration; Microprocessors; Oscillators; Switches; Switching circuits;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1978.1155747
