Title :
High-performance W-band LNA and SPDT switch in 0.13µm SiGe HBT technology
Author :
Cagri Ulusoy, A. ; Schmid, Robert L. ; Kaynak, Mehmet ; Tillack, Bernd ; Cressler, John D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
In this work, the authors present high performance W-band building blocks in an 0.13μm SiGe HBT technology. A single-pole double-throw switch is presented utilizing reverse-saturated HBTs, with a measured insertion loss of 2 dB and an isolation of 27 dB at 94 GHz, demonstrating state-of-the-art performance. The LNA provides a gain of 20 dB and a noise figure of 4.2 dB. An integrated version is presented as well towards a radiometer frontend and transmit/receive frontend.20
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; loss measurement; low noise amplifiers; microwave amplifiers; microwave switches; HBT technology; SPDT switch; SiGe; W-band LNA; frequency 94 GHz; gain 20 dB; heterojunction bipolar transistors; insertion loss; loss 2 dB; low noise amplifiers; noise figure; noise figure 4.2 dB; radiometer frontend; reverse-saturated HBT; single-pole double-throw switch; size 0.13 mum; transmit-receive frontend; Heterojunction bipolar transistors; Insertion loss; Loss measurement; Noise; Silicon germanium; Switches; Switching circuits; Low-noise amplifiers; millimeter wave integrated circuits; radiometers; silicon germanium; switches;
Conference_Titel :
Radio and Wireless Symposium (RWS), 2015 IEEE
Conference_Location :
San Diego, CA
DOI :
10.1109/RWS.2015.7129716
