Determination of InP-based HBT device models at end of life

Author

Thomas, S., III ; Fields, C.H. ; Williams, F., Jr. ; Madhav, M.

Author_Institution

HRL Labs., LLC, Malibu, CA, USA

fYear

2000

fDate

2000

Firstpage

149

Lastpage

165

Abstract

InP-based HBTs have been stressed to approximate degradation from a 15 year system life and device models were generated. The basic characteristics of these models are increases in the emitter resistance (Re) and in the base-collector capacitance (Cjc). The end of life model can be obtained from the standard model by increasing Re from 3.6 to 5.7 Ω and Cjc from 20.1 to 23.4 fF. These changes lead to decreases in: transistor gain, Ft, and Fmax, and an increase in the base-emitter voltage (V_bel) at typical operating conditions. The changes in the device parameters generally fall within the normal process variations. No increase in low current base emitter voltage (V_be0) occurs, indicating the lack of Be diffusion into the emitter

Keywords

III-V semiconductors; failure analysis; heterojunction bipolar transistors; indium compounds; life testing; semiconductor device models; semiconductor device reliability; semiconductor device testing; InP; InP HBT; base-collector capacitance; base-emitter voltage; cutoff frequency; emitter resistance; end-of-life device model; gain; life testing; maximum operating frequency; mean-time-to-failure; reliability; Degradation; Heterojunction bipolar transistors; Integrated circuit modeling; Ovens; Packaging; Semiconductor process modeling; Stress measurement; Temperature; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs Reliability Workshop, 2000. Proceedings

Conference_Location

Seattle, WA

Print_ISBN

0-7908-0102-7

Type

conf

DOI

10.1109/GAASRW.2000.902427

Filename

902427