Title :
Production InGaP HBT reliability
Author :
Cheskis, David ; Young, Alexander P. ; Bayraktaroglu, Burhan
Author_Institution :
Anadigics Inc., Warren, NJ, USA
Abstract :
We report on the long term reliability of InGaP emitter HBTs fabricated in our 150 mm production facility. The estimated median-time-to-failure of the devices fabricated in our manufacturing process is in excess of 109 hours with an activation energy of EA=1.8±0.2 eV. A lifetime of 3500 hours has been measured at a junction temperature, Tj, of 300°C and current density, Jc=25 kA/cm2. These are the first reported reliability results of a 150 mm InGaP HBT manufacturing process. Additionally, we have measured the variability of the device reliability dependent upon epitaxial material supplier
Keywords :
III-V semiconductors; failure analysis; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device reliability; semiconductor epitaxial layers; 150 mm; 300 C; 3500 hr; InGaP; InGaP HBT reliability; activation energy; current density; epitaxial material; junction temperature; lifetime; manufacturing process; median-time-to-failure; production facility; Current measurement; Fabrication; Fingers; Heterojunction bipolar transistors; Manufacturing processes; Materials reliability; Production; Temperature; Testing; Thermal resistance;
Conference_Titel :
GaAs Reliability Workshop, 2000. Proceedings
Conference_Location :
Seattle, WA
Print_ISBN :
0-7908-0102-7
DOI :
10.1109/GAASRW.2000.902428
