Title :
Location of defective cells in HBT power amplifier arrays using IR emission microscopy
Author :
Dai, Peter ; Canfield, Philip
Abstract :
A logical method and approach to a very low percentage failure rate problem for HBT PA products is presented. The value of the IR emission technique coupled with junction breakdown measurements demonstrated the capability to identify a potentially bad HBT cell contained in an array of a few hundred HBT cells. HBT cells with low junction breakdown characteristics are demonstrated to be a potential killer to the whole PA. The cause of low breakdown can be either process or epi-layer defects, as well as by ESD or reverse voltage under certain conditions
Keywords :
bipolar transistor circuits; electrostatic discharge; failure analysis; heterojunction bipolar transistors; infrared imaging; power amplifiers; semiconductor device breakdown; semiconductor device testing; semiconductor epitaxial layers; ESD; HBT power amplifier array; IR emission microscopy; defective cell location; epilayer defect; failure rate; junction breakdown; process defect; reverse voltage; Electrostatic discharge; Gallium arsenide; Heterojunction bipolar transistors; Manufacturing; Microscopy; Power amplifiers; Power system reliability; Production; Temperature distribution; Testing;
Conference_Titel :
GaAs Reliability Workshop, 2000. Proceedings
Conference_Location :
Seattle, WA
Print_ISBN :
0-7908-0102-7
DOI :
10.1109/GAASRW.2000.902429
