Title :
A 4K static bipolar TTL RAM
Author :
Okada, Kenichi ; Aomura, K. ; Nokubo, J. ; Shiba, H.
Author_Institution :
Nippon Electric Co., Kawasaki, Japan
Abstract :
This paper will describe a 40ns, 50mW, 4K static bipolar RAM that uses the polysilicon self-aligned method in combination with non-epi technology (diffused collector) and a local oxidation process to improve performance.
Keywords :
Aluminum; Driver circuits; Electrodes; Oxidation; P-n junctions; Parasitic capacitance; Random access memory; Read-write memory; Resistors; Silicon;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1978.1155751
