DocumentCode :
2864279
Title :
A four-device bipolar memory cell
Author :
Heald, R.
Author_Institution :
Signetics Corp., Sunnyvale, CA, USA
Volume :
XXI
fYear :
1978
fDate :
15-17 Feb. 1978
Firstpage :
102
Lastpage :
103
Abstract :
A static I2L memory cell using four transistors in a single isolated region will be described. Sharing of access lines permits operation with six contacts per cell yielding a cell size near 1 square mil.
Keywords :
Circuit synthesis; Current supplies; Differential amplifiers; Logic circuits; Solid state circuits; Testing; Time measurement; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
Conference_Location :
San Francisco, CA, USA
Type :
conf
DOI :
10.1109/ISSCC.1978.1155752
Filename :
1155752
Link To Document :
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