Title :
Combined temperature and current stressing of MOVPE-grown GaAs/InGaP HBTs
Author :
Wirfl, Joachim ; Kurpas, P. ; Brunner, F. ; Mai, M. ; Bergunde, T. ; Spitzbart, T. ; Weyers, M.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
Abstract :
HBTs for numerous applications increasingly penetrate the market thus placing significant pressure towards the development of highly reliable devices. MOVPE grown InGaP/GaAs-HBTs have recently shown their great potential by demonstrating remarkable reliability values. This paper focuses on the gradual and sudden degradation of InGaP/GaAs HBT DC-parameters during combined thermal and electrical lifetime testing. The tests have been performed on GaInP/GaAs HBTs developed for highly efficient microwave power amplifiers
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; life testing; semiconductor device reliability; semiconductor device testing; vapour phase epitaxial growth; DC parameters; InGaP-GaAs; InGaP/GaAs HBT; MOVPE growth; current stress; electrical lifetime testing; microwave power amplifier; reliability; temperature stress; thermal lifetime testing; Epitaxial growth; Epitaxial layers; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Life testing; Microwave amplifiers; Performance evaluation; Temperature; Thermal degradation;
Conference_Titel :
GaAs Reliability Workshop, 2000. Proceedings
Conference_Location :
Seattle, WA
Print_ISBN :
0-7908-0102-7
DOI :
10.1109/GAASRW.2000.902430
