Combined temperature and current stressing of MOVPE-grown GaAs/InGaP HBTs

Author

Wirfl, Joachim ; Kurpas, P. ; Brunner, F. ; Mai, M. ; Bergunde, T. ; Spitzbart, T. ; Weyers, M.

Author_Institution

Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany

fYear

2000

fDate

2000

Firstpage

205

Lastpage

224

Abstract

HBTs for numerous applications increasingly penetrate the market thus placing significant pressure towards the development of highly reliable devices. MOVPE grown InGaP/GaAs-HBTs have recently shown their great potential by demonstrating remarkable reliability values. This paper focuses on the gradual and sudden degradation of InGaP/GaAs HBT DC-parameters during combined thermal and electrical lifetime testing. The tests have been performed on GaInP/GaAs HBTs developed for highly efficient microwave power amplifiers

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; life testing; semiconductor device reliability; semiconductor device testing; vapour phase epitaxial growth; DC parameters; InGaP-GaAs; InGaP/GaAs HBT; MOVPE growth; current stress; electrical lifetime testing; microwave power amplifier; reliability; temperature stress; thermal lifetime testing; Epitaxial growth; Epitaxial layers; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Life testing; Microwave amplifiers; Performance evaluation; Temperature; Thermal degradation;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs Reliability Workshop, 2000. Proceedings

Conference_Location

Seattle, WA

Print_ISBN

0-7908-0102-7

Type

conf

DOI

10.1109/GAASRW.2000.902430

Filename

902430