• DocumentCode
    2864326
  • Title

    Integrated common mode capacitors for SiC JFET inverters

  • Author

    Robutel, Rémi ; Martin, Christian ; Morel, Hervé ; Mattavelli, Paolo ; Boroyevitch, Dushan ; Meuret, Régis ; Gazel, Nicolas

  • Author_Institution
    Ampere Lab., Univ. de Lyon, Villeurbanne, France
  • fYear
    2011
  • fDate
    6-11 March 2011
  • Firstpage
    196
  • Lastpage
    202
  • Abstract
    SiC-JFET based inverters can achieve very fast switching, hence reducing the commutation losses, at the cost of increased Electro-Magnetic Interferences (EMI). To keep the EMI conducted emissions within reasonable limits, we propose to integrate some small-values capacitors directly into the power module. Common Mode (CM) is investigated and compared with a standard configuration. The high frequency noise, which is usually difficult to filter, is contained in a close loop with the switching source, and far from the network. To demonstrate this concept, simulations are used as well as experiments on a SiC-JFET half-bridge structure. Benefits and limitations are investigated in the case of mid-power range inverters for aircraft applications.
  • Keywords
    JFET integrated circuits; capacitors; electromagnetic interference; invertors; silicon compounds; SiC; SiC JFET half bridge structure; SiC JFET inverter; aircraft application; electromagnetic interference; high frequency noise; integrated common mode capacitor; junction gate field effect transistor; mid power range inverter; power module; small value capacitor; switching source; Capacitors; Current measurement; Electromagnetic interference; Inverters; Multichip modules; Noise; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applied Power Electronics Conference and Exposition (APEC), 2011 Twenty-Sixth Annual IEEE
  • Conference_Location
    Fort Worth, TX
  • ISSN
    1048-2334
  • Print_ISBN
    978-1-4244-8084-5
  • Type

    conf

  • DOI
    10.1109/APEC.2011.5744597
  • Filename
    5744597