DocumentCode :
2864326
Title :
Integrated common mode capacitors for SiC JFET inverters
Author :
Robutel, Rémi ; Martin, Christian ; Morel, Hervé ; Mattavelli, Paolo ; Boroyevitch, Dushan ; Meuret, Régis ; Gazel, Nicolas
Author_Institution :
Ampere Lab., Univ. de Lyon, Villeurbanne, France
fYear :
2011
fDate :
6-11 March 2011
Firstpage :
196
Lastpage :
202
Abstract :
SiC-JFET based inverters can achieve very fast switching, hence reducing the commutation losses, at the cost of increased Electro-Magnetic Interferences (EMI). To keep the EMI conducted emissions within reasonable limits, we propose to integrate some small-values capacitors directly into the power module. Common Mode (CM) is investigated and compared with a standard configuration. The high frequency noise, which is usually difficult to filter, is contained in a close loop with the switching source, and far from the network. To demonstrate this concept, simulations are used as well as experiments on a SiC-JFET half-bridge structure. Benefits and limitations are investigated in the case of mid-power range inverters for aircraft applications.
Keywords :
JFET integrated circuits; capacitors; electromagnetic interference; invertors; silicon compounds; SiC; SiC JFET half bridge structure; SiC JFET inverter; aircraft application; electromagnetic interference; high frequency noise; integrated common mode capacitor; junction gate field effect transistor; mid power range inverter; power module; small value capacitor; switching source; Capacitors; Current measurement; Electromagnetic interference; Inverters; Multichip modules; Noise; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2011 Twenty-Sixth Annual IEEE
Conference_Location :
Fort Worth, TX
ISSN :
1048-2334
Print_ISBN :
978-1-4244-8084-5
Type :
conf
DOI :
10.1109/APEC.2011.5744597
Filename :
5744597
Link To Document :
بازگشت