• DocumentCode
    2864438
  • Title

    A precision FET-less sample-hold with high charge-to-droop current ratio

  • Author

    Erdi, G. ; Henneuse, P.

  • Author_Institution
    Precision Monolithics, Inc., Santa Clara, CA, USA
  • Volume
    XXI
  • fYear
    1978
  • fDate
    15-17 Feb. 1978
  • Firstpage
    228
  • Lastpage
    229
  • Abstract
    This paper will cover a monolithic sample and hold, designed without using FETs. A charging circuit provides 50mA to the hold capacitor, while the super beta output amplifier\´s droop current is 50pA over a 0-70^{\\circ} C range, resulting in a 109charge-to-droop current ratio.
  • Keywords
    Bridge circuits; Capacitance; Capacitors; Diodes; Epitaxial layers; FETs; MOSFETs; Power dissipation; Switches; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1978.1155762
  • Filename
    1155762
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2864438