Title :
Ring oscillator with high speed XMOS transistors [cross gate MOSFETs]
Author :
Tan, Philip Beow Yew ; Kordesch, Albert Victor ; Sidek, Othman
Author_Institution :
Dept. of Integration & Device, Silterra Malaysia Sdn. Bhd, Kedah, Malaysia
Abstract :
In this paper, we demonstrate a new method of improving the conventional MOSFET (MOS) switching speed without changing the channel length and the technology used for fabrication. We add a 90 degree twisted poly gate to the original poly gate to form a cross gate MOSFET (XMOS) to improve the MOS transistor switching speed. The measurement results from a ring oscillator show that the gate delay of the MOS inverter and the XMOS inverter are 36.7 ps and 32.2 ps respectively. Hence, the MOS transistor switching speed is proven to improve up to 12.3% by applying the cross gate structure.
Keywords :
MOSFET; logic gates; oscillators; 32.2 ps; 36.7 ps; MOS inverter gate delay; XMOS inverter gate delay; cross gate MOSFET; cross gate structure; high speed XMOS transistors; high switching speed MOSFET; right-angle twisted poly gate; ring oscillator; CMOS technology; Circuit optimization; Delay; Fabrication; Frequency; Inverters; MOSFET circuits; Parasitic capacitance; Ring oscillators; Switching circuits;
Conference_Titel :
RF and Microwave Conference, 2004. RFM 2004. Proceedings
Print_ISBN :
0-7803-8671-X
DOI :
10.1109/RFM.2004.1411083
