• DocumentCode
    2864546
  • Title

    A 60 GHz BiFET constructive wave power amplifier

  • Author

    Kijsanayotin, Tissana ; Buckwalter, James F.

  • Author_Institution
    Department of Electrical and Computer Engineering, University of California, San Diego, 9500 Gilman Dr., La Jolla, USA 92093
  • fYear
    2012
  • fDate
    17-22 June 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A V-band BiFET Constructive Wave Power Amplifier (BiFET CWPA) is presented that allows for a graceful degradation in operation. The four-stage amplifier operates from 52–62 GHz with a peak small-signal gain of 10.7 dB at 60 GHz. Peak output saturation power (Psat) is 16.4 dBm with associated power-added efficiency (PAE) of 15.3%. The amplifier nominally consumes 52 mW (4 V × 0.13 mA) and the active area occupies only 0.074 mm2 of die space.
  • Keywords
    Feedback circuits; Gain; Heterojunction bipolar transistors; Impedance; Power amplifiers; Power transmission lines; Silicon germanium; 60 GHz; BiFET; SiGe-BiCMOS; millimeter-wave; power amplifier; traveling-wave amplifier;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
  • Conference_Location
    Montreal, QC, Canada
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4673-1085-7
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2012.6259476
  • Filename
    6259476
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2864546