SiGe BiCMOS power amplifier with a switchable output matching network for efficiency enhancement

Author

Yi-Chun Lee ; Hsiao-Yun Li ; Jia-Shiang Fu

Author_Institution

Nat. Central Univ., Jhongli, Taiwan

fYear

2015

fDate

25-28 Jan. 2015

Firstpage

62

Lastpage

64

Abstract

A SiGe BiCMOS power amplifier (PA) with a switchable output matching network (OMN) is designed and measured. A MOS switch is incorporated in the OMN of the PA. According to the state of the switch, the proposed PA can be operated in either the high-power (HP) or low-power (LP) modes. In the HP mode, the measured P_1dB is 20.1 dBm and PAE is 23.1%. When the PA is switched from the HP mode to the LP mode, the efficiency is improved. The reduction in power consumption is more than 20% when the output power is 17.8 dBm.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; integrated circuit design; power amplifiers; semiconductor switches; BiCMOS power amplifier; HP mode; LP mode; MOS switch; OMN; PA; PAE; SiGe; efficiency 23.1 percent; high-power mode; low-power mode; power consumption; switchable output matching network; BiCMOS integrated circuits; Capacitors; Impedance; Impedance matching; Power generation; Silicon germanium; Switches; Power amplifier; SiGe; efficiency enhancement; switch; tunable matching network;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Symposium (RWS), 2015 IEEE

Conference_Location

San Diego, CA

Type

conf

DOI

10.1109/RWS.2015.7129737

Filename

7129737