Title :
SiGe BiCMOS power amplifier with a switchable output matching network for efficiency enhancement
Author :
Yi-Chun Lee ; Hsiao-Yun Li ; Jia-Shiang Fu
Author_Institution :
Nat. Central Univ., Jhongli, Taiwan
Abstract :
A SiGe BiCMOS power amplifier (PA) with a switchable output matching network (OMN) is designed and measured. A MOS switch is incorporated in the OMN of the PA. According to the state of the switch, the proposed PA can be operated in either the high-power (HP) or low-power (LP) modes. In the HP mode, the measured P1dB is 20.1 dBm and PAE is 23.1%. When the PA is switched from the HP mode to the LP mode, the efficiency is improved. The reduction in power consumption is more than 20% when the output power is 17.8 dBm.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; integrated circuit design; power amplifiers; semiconductor switches; BiCMOS power amplifier; HP mode; LP mode; MOS switch; OMN; PA; PAE; SiGe; efficiency 23.1 percent; high-power mode; low-power mode; power consumption; switchable output matching network; BiCMOS integrated circuits; Capacitors; Impedance; Impedance matching; Power generation; Silicon germanium; Switches; Power amplifier; SiGe; efficiency enhancement; switch; tunable matching network;
Conference_Titel :
Radio and Wireless Symposium (RWS), 2015 IEEE
Conference_Location :
San Diego, CA
DOI :
10.1109/RWS.2015.7129737
