DocumentCode :
2864620
Title :
A high-speed molybdenum-gate MOS RAM
Author :
Kondo, Makoto ; Mano, Toru ; Yanagawa, Hiroto ; Kikuchi, Hiroaki ; Amazawa, Takao ; Kiuchi, Kentaro ; Yoshomura, H.
Author_Institution :
Nippon Tel-Tel Public Corp., Tokyo, Japan
Volume :
XXI
fYear :
1978
fDate :
15-17 Feb. 1978
Firstpage :
158
Lastpage :
159
Keywords :
Capacitors; Clocks; Coupling circuits; Integrated circuit interconnections; Laboratories; MOSFETs; Multiplexing; Power dissipation; Read-write memory; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
Conference_Location :
San Francisco, CA, USA
Type :
conf
DOI :
10.1109/ISSCC.1978.1155773
Filename :
1155773
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2864620
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