DocumentCode
2864752
Title
A novel fault detection circuit for short-circuit faults of IGBT
Author
Kim, Min-Sub ; Park, Byoung-Gun ; Kim, Rae-young ; Hyun, Dong-seok
Author_Institution
Dept. of Electr. Eng., Hanyang Univ., Seoul, South Korea
fYear
2011
fDate
6-11 March 2011
Firstpage
359
Lastpage
363
Abstract
This paper proposed a novel fault detection circuit comparing the gate voltage of IGBT. The proposed scheme is operated to protect IGBT under short-circuit faults such as hard switch-fault (HSF). The proposed circuit consists of two parts. One is the difference generator which generates a difference between a gate voltage and an input voltage. The other is the short-circuit fault detector using a charged voltage of capacitor for short-circuit fault detection. The feasibility of the proposed short-circuit detecting scheme is verified by simulation results.
Keywords
fault diagnosis; insulated gate bipolar transistors; IGBT; charged voltage; fault detection circuit; gate voltage; hard switch-fault; insulated gate bipolar transistor; short-circuit faults; Electrical fault detection; Fault detection; Generators; Inductance; Insulated gate bipolar transistors; Logic gates;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition (APEC), 2011 Twenty-Sixth Annual IEEE
Conference_Location
Fort Worth, TX
ISSN
1048-2334
Print_ISBN
978-1-4244-8084-5
Type
conf
DOI
10.1109/APEC.2011.5744621
Filename
5744621
Link To Document