• DocumentCode
    2864752
  • Title

    A novel fault detection circuit for short-circuit faults of IGBT

  • Author

    Kim, Min-Sub ; Park, Byoung-Gun ; Kim, Rae-young ; Hyun, Dong-seok

  • Author_Institution
    Dept. of Electr. Eng., Hanyang Univ., Seoul, South Korea
  • fYear
    2011
  • fDate
    6-11 March 2011
  • Firstpage
    359
  • Lastpage
    363
  • Abstract
    This paper proposed a novel fault detection circuit comparing the gate voltage of IGBT. The proposed scheme is operated to protect IGBT under short-circuit faults such as hard switch-fault (HSF). The proposed circuit consists of two parts. One is the difference generator which generates a difference between a gate voltage and an input voltage. The other is the short-circuit fault detector using a charged voltage of capacitor for short-circuit fault detection. The feasibility of the proposed short-circuit detecting scheme is verified by simulation results.
  • Keywords
    fault diagnosis; insulated gate bipolar transistors; IGBT; charged voltage; fault detection circuit; gate voltage; hard switch-fault; insulated gate bipolar transistor; short-circuit faults; Electrical fault detection; Fault detection; Generators; Inductance; Insulated gate bipolar transistors; Logic gates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applied Power Electronics Conference and Exposition (APEC), 2011 Twenty-Sixth Annual IEEE
  • Conference_Location
    Fort Worth, TX
  • ISSN
    1048-2334
  • Print_ISBN
    978-1-4244-8084-5
  • Type

    conf

  • DOI
    10.1109/APEC.2011.5744621
  • Filename
    5744621