DocumentCode :
2864752
Title :
A novel fault detection circuit for short-circuit faults of IGBT
Author :
Kim, Min-Sub ; Park, Byoung-Gun ; Kim, Rae-young ; Hyun, Dong-seok
Author_Institution :
Dept. of Electr. Eng., Hanyang Univ., Seoul, South Korea
fYear :
2011
fDate :
6-11 March 2011
Firstpage :
359
Lastpage :
363
Abstract :
This paper proposed a novel fault detection circuit comparing the gate voltage of IGBT. The proposed scheme is operated to protect IGBT under short-circuit faults such as hard switch-fault (HSF). The proposed circuit consists of two parts. One is the difference generator which generates a difference between a gate voltage and an input voltage. The other is the short-circuit fault detector using a charged voltage of capacitor for short-circuit fault detection. The feasibility of the proposed short-circuit detecting scheme is verified by simulation results.
Keywords :
fault diagnosis; insulated gate bipolar transistors; IGBT; charged voltage; fault detection circuit; gate voltage; hard switch-fault; insulated gate bipolar transistor; short-circuit faults; Electrical fault detection; Fault detection; Generators; Inductance; Insulated gate bipolar transistors; Logic gates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2011 Twenty-Sixth Annual IEEE
Conference_Location :
Fort Worth, TX
ISSN :
1048-2334
Print_ISBN :
978-1-4244-8084-5
Type :
conf
DOI :
10.1109/APEC.2011.5744621
Filename :
5744621
Link To Document :
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