DocumentCode
2864780
Title
P-cell and N-cell based IGBT module: Layout design, parasitic extraction, and experimental verification
Author
Li, Shengnan ; Tolbert, Leon M. ; Wang, Fred ; Peng, Fang Zheng
Author_Institution
Electr. Eng. & Comput. Sci. Dept., Univ. of Tennessee, Knoxville, TN, USA
fYear
2011
fDate
6-11 March 2011
Firstpage
372
Lastpage
378
Abstract
This paper proposes a novel packaging method for power electronics modules based on the concepts of P-cell and N-cell. It can reduce the stray inductance in the current commutation path in a phase-leg module and hence improve the switching behavior. Two IGBT phase-leg modules, specifically a P-cell and N-cell based module and a conventional module are designed. Using Ansoft Q3D Extractor, electromagnetic simulation is carried out to extract the stray inductance from the two modules. Switching behavior with different package parasitics is studied based on Saber simulation. Two prototype phase-leg modules based on two different designs are fabricated. The parasitics are measured using a precision impedance analyzer. The measurement results agree with the simulation very well.
Keywords
electromagnetic interference; modules; power electronics; power semiconductor switches; printed circuit layout; IGBT module; Q3D extractor; electromagnetic simulation; experimental verification; layout design; packaging method; parasitic extraction; power electronics modules; switching behavior; Inductance; Insulated gate bipolar transistors; Layout; Multichip modules; Substrates; Switches; Wires; IGBT; N-cell; P-cell; commutation loop; phase-leg module; stray inductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition (APEC), 2011 Twenty-Sixth Annual IEEE
Conference_Location
Fort Worth, TX
ISSN
1048-2334
Print_ISBN
978-1-4244-8084-5
Type
conf
DOI
10.1109/APEC.2011.5744623
Filename
5744623
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