DocumentCode :
2864835
Title :
Design of low phase noise LC VCO using asymmetric inductance tank and HNFF technology in InGaP/GaAs HBT process
Author :
Wang, Cong ; Kim, Nam-Young
Author_Institution :
Kwangwoon University, Seoul, 139-701, Korea
fYear :
2012
fDate :
17-22 June 2012
Firstpage :
1
Lastpage :
3
Abstract :
A harmonic noise frequency filtering (HNFF) LC voltage-controlled oscillator (VCO) is fabricated using asymmetric inductance tank (AIT) in InGaP/GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) technology. In order to optimize phase noise, the AIT and HNFF techniques are presented. The proposed VCO exhibited the phase noise of −117.3 dBc/Hz and −129.96 dBc/Hz at 100 kHz and 1 MHz offset frequencies and a tuning range from 1.46 GHz to 1.721 GHz. The total on-chip LC VCO is implanted in 0.85 × 0.85 mm2 chip area.
Keywords :
Capacitors; Frequency conversion; Gallium arsenide; Noise; Radio frequency; Switches; Voltage-controlled oscillators; Harmonic noise frequency filtering (HNFF); asymmetric inductance tank (AIT); heterojunction bipolar transistor (HBT); monolithic microwave integrated circuit (MMIC); voltage-controlled oscillator (VCO);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
ISSN :
0149-645X
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2012.6259493
Filename :
6259493
Link To Document :
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