Title :
Gigabit-rate GaAs FET RF phase modulators
Author :
Dobratz, B. ; Ho, N. ; Lee, Gene ; Suyematsu, H.
Author_Institution :
Hughes Aircraft Company, Los Angeles, CA, USA
Abstract :
Microwave biphase modulators in the 4-16GHz range using a GaAs FET as the switching element will be discussed. Key features are multigigabit data rates and very low dc power consumption.
Keywords :
Amplitude modulation; Contacts; Driver circuits; Gallium arsenide; Impedance; Microwave FETs; Phase modulation; Radio frequency; Reflection; Switches;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1978.1155786
