DocumentCode
2864849
Title
Improved comprehensive thermal model for power electronics building block applications
Author
Wang, Huanhuan ; Khambadkone, Ashwin M. ; Erik, Birgersson Karl
Author_Institution
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
fYear
2011
fDate
6-11 March 2011
Firstpage
390
Lastpage
395
Abstract
Power electronics devices play a key role in utilizing energy efficiently. When the power demand is highly dynamic and variable, the key requirement is to transfer power to the load with the most appropriate voltage, current, phase and frequency so as to achieve the most efficient conversion of power under all load conditions. IGBT behavior under short circuit and overload turn off condition is thus quite important. In this paper, an improved and comprehensive thermal model for power electronics building block (PEBB) is presented, which provides a higher degree of predictability of temperature, in not only steady state, especially at high current conditions but also under different short circuit failure modes.
Keywords
insulated gate bipolar transistors; power bipolar transistors; power electronics; IGBT; different short circuit failure modes; overload turn off; power demand; power electronics building block; thermal model; Heat sinks; Impedance; Insulated gate bipolar transistors; Integrated circuit modeling; Junctions; Mathematical model; Transient analysis; Finite Element Method (FEM); Thermal model; short circuit;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition (APEC), 2011 Twenty-Sixth Annual IEEE
Conference_Location
Fort Worth, TX
ISSN
1048-2334
Print_ISBN
978-1-4244-8084-5
Type
conf
DOI
10.1109/APEC.2011.5744626
Filename
5744626
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