DocumentCode :
2864849
Title :
Improved comprehensive thermal model for power electronics building block applications
Author :
Wang, Huanhuan ; Khambadkone, Ashwin M. ; Erik, Birgersson Karl
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
fYear :
2011
fDate :
6-11 March 2011
Firstpage :
390
Lastpage :
395
Abstract :
Power electronics devices play a key role in utilizing energy efficiently. When the power demand is highly dynamic and variable, the key requirement is to transfer power to the load with the most appropriate voltage, current, phase and frequency so as to achieve the most efficient conversion of power under all load conditions. IGBT behavior under short circuit and overload turn off condition is thus quite important. In this paper, an improved and comprehensive thermal model for power electronics building block (PEBB) is presented, which provides a higher degree of predictability of temperature, in not only steady state, especially at high current conditions but also under different short circuit failure modes.
Keywords :
insulated gate bipolar transistors; power bipolar transistors; power electronics; IGBT; different short circuit failure modes; overload turn off; power demand; power electronics building block; thermal model; Heat sinks; Impedance; Insulated gate bipolar transistors; Integrated circuit modeling; Junctions; Mathematical model; Transient analysis; Finite Element Method (FEM); Thermal model; short circuit;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2011 Twenty-Sixth Annual IEEE
Conference_Location :
Fort Worth, TX
ISSN :
1048-2334
Print_ISBN :
978-1-4244-8084-5
Type :
conf
DOI :
10.1109/APEC.2011.5744626
Filename :
5744626
Link To Document :
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