• DocumentCode
    2864849
  • Title

    Improved comprehensive thermal model for power electronics building block applications

  • Author

    Wang, Huanhuan ; Khambadkone, Ashwin M. ; Erik, Birgersson Karl

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
  • fYear
    2011
  • fDate
    6-11 March 2011
  • Firstpage
    390
  • Lastpage
    395
  • Abstract
    Power electronics devices play a key role in utilizing energy efficiently. When the power demand is highly dynamic and variable, the key requirement is to transfer power to the load with the most appropriate voltage, current, phase and frequency so as to achieve the most efficient conversion of power under all load conditions. IGBT behavior under short circuit and overload turn off condition is thus quite important. In this paper, an improved and comprehensive thermal model for power electronics building block (PEBB) is presented, which provides a higher degree of predictability of temperature, in not only steady state, especially at high current conditions but also under different short circuit failure modes.
  • Keywords
    insulated gate bipolar transistors; power bipolar transistors; power electronics; IGBT; different short circuit failure modes; overload turn off; power demand; power electronics building block; thermal model; Heat sinks; Impedance; Insulated gate bipolar transistors; Integrated circuit modeling; Junctions; Mathematical model; Transient analysis; Finite Element Method (FEM); Thermal model; short circuit;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applied Power Electronics Conference and Exposition (APEC), 2011 Twenty-Sixth Annual IEEE
  • Conference_Location
    Fort Worth, TX
  • ISSN
    1048-2334
  • Print_ISBN
    978-1-4244-8084-5
  • Type

    conf

  • DOI
    10.1109/APEC.2011.5744626
  • Filename
    5744626