DocumentCode
2864889
Title
Modeling of long term memory effects in RF power amplifiers with dynamic parameters
Author
Tehrani, Ali Soltani ; Eriksson, Thomas ; Fager, Christian
Author_Institution
Department of Signals and Systems, Chalmers University of Technology, SE-41296, Göteborg, Sweden
fYear
2012
fDate
17-22 June 2012
Firstpage
1
Lastpage
3
Abstract
This paper presents a new radio frequency power amplifier behavioral model that is capable of modeling long term memory effects. The proposed model is derived by assuming linear dependence of the parameters of a conventional model to a long term memory parameter, which enables the model to better track the signal-induced changes of the power amplifier electrical behavior. The model is experimentally tested on a 100W Doherty power amplifier, with a signal that has a step-like change in power, representative of a realistic communication system with bursty behavior. Results show that the proposed model is able to improve the normalized mean squared error performance by around 2–3 dB.
Keywords
Complexity theory; Computational modeling; Integrated circuit modeling; Mathematical model; Polynomials; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location
Montreal, QC, Canada
ISSN
0149-645X
Print_ISBN
978-1-4673-1085-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2012.6259496
Filename
6259496
Link To Document