Title :
Low-power 20-Gb/s SiGe BiCMOS driver with 2.5 V output swing
Author :
Sedighi, Behnam ; Ostrovskyy, Pylyp ; Scheytt, J. Christoph
Author_Institution :
NICTA, University of Melbourne, VIC 3010, Australia
Abstract :
this paper investigates low-power design of high-speed and high-swing electronic driver circuits. A method to estimate and optimize the power consumption of such driver ICs is presented. A 20-Gb/s driver circuit is fabricated in 0.25 µm SiGe BiCMOS process and an output swing of 2.5 Vpp is measured. The driver consumes 0.75 W from 5 V supply.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; Capacitance; Driver circuits; Power demand; Silicon germanium; Transistors; breakdown voltage; driver; emitter-follower; inductive peaking; jitter; overshoot;
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2012.6259502
