Title :
99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors
Author :
Morita, Tatsuo ; Tamura, Satoshi ; Anda, Yoshiharu ; Ishida, Masahiro ; Uemoto, Yasuhiro ; Ueda, Tetsuzo ; Tanaka, Tsuyoshi ; Ueda, Daisuke
Author_Institution :
Semicond. Co., Panasonic Corp., Nagaokakyo, Japan
Abstract :
In this paper, we present a successful operation of Gallium Nitride(GaN)-based three-phase inverter with high efficiency of 99.3% for driving motor at 900W under the carrier frequency of 6kHz. This efficiency well exceeds the value by IGBT (Insulated Gate Bipolar Transistor). This demonstrates that GaN has a great potential for power switching application competing with SiC. Fully reduced on-state resistance in a new normally-off GaN transistor called Gate Injection Transistor (GIT) greatly helps to increase the efficiency. In addition, use of the bidirectional operation of the lateral and compact GITs with synchronous gate driving, the inverter is operated free from fly-wheel diodes which have been connected in parallel with IGBTs in a conventional inverter system.
Keywords :
III-V semiconductors; gallium compounds; insulated gate bipolar transistors; invertors; motor drives; power bipolar transistors; wide band gap semiconductors; GaN; IGBT; fly-wheel diodes; frequency 6 kHz; gate injection transistors; insulated gate bipolar transistor; motor drive; power 900 W; power switching; three-phase inverter; Gallium nitride; Insulated gate bipolar transistors; Inverters; Logic gates; Resistance; Threshold voltage; Transistors;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2011 Twenty-Sixth Annual IEEE
Conference_Location :
Fort Worth, TX
Print_ISBN :
978-1-4244-8084-5
DOI :
10.1109/APEC.2011.5744640
