Title :
Microwave and millimeter wave power amplifiers: Technology, applications, benchmarks, and future trends
Author :
Komiak, James J.
Author_Institution :
Global Eng., BAE Syst. Electron. Syst., Nashua, NH, USA
Abstract :
Solid State Transistor Device Technology is ubiquitous in communications, radar, electronic warfare, and instrumentation applications. This abridged presentation will cover Si LDMOS, PHEMT, InP HEMT/MHEMT and GaN HEMT. Content includes principles of operation, structures, characteristics, classes of operation, and device state of the art benchmarks. The art of power amplifier design is approached from a historical perspective. Power amplifiers utilizing these device technologies covering UHF through sub-millimeter wave are described including amplifier state of the art benchmarks. Future trends are highlighted and summarized.
Keywords :
III-V semiconductors; elemental semiconductors; gallium compounds; high electron mobility transistors; indium compounds; microwave power amplifiers; millimetre wave power amplifiers; silicon; wide band gap semiconductors; GaN; InP; LDMOS; MHEMT; PHEMT; Si; communications; device technologies; electronic warfare; instrumentation applications; microwave power amplifiers; millimeter wave power amplifiers; radar; solid state transistor device technology; Benchmark testing; Gallium nitride; HEMTs; Integrated circuit modeling; MMICs; Power amplifiers; Solid modeling; microwave; millimeter wave; power amplifier; solid state;
Conference_Titel :
Radio and Wireless Symposium (RWS), 2015 IEEE
Conference_Location :
San Diego, CA
DOI :
10.1109/RWS.2015.7129767
