Ultra broad band CMOS balanced amplifiers using quadrature power splitters on glass integrated passive device (GIPD) and LTCC with flip chip interconnects for SiP integration

Author

Lu, Hsin-Chia ; Kuo, Che-Chung ; Wei, Shuan-An ; Huang, Po-Sheng ; Wang, Huei

Author_Institution

Graduate Institute of Electronics Engineering, Department of Electrical Engineering, National Taiwan University, Taipei, 106, Taiwan. R.O.C.

fYear

2012

fDate

17-22 June 2012

Firstpage

1

Lastpage

3

Abstract

Two balance amplifiers operating at 2.5∼12-GHz with 1dB gain flatness and under 10 dB return loss are presented. Low loss broadband quadrature power splitters for BAs are realized on glass integrated passive device (GIPD) and low temperature cofired ceramic (LTCC). For 0.18-µm CMOS unit amplifier in BA, output matching network based on 3rd order band pass filter is used for optimum output power and good return loss. These BAs demonstrate widest bandwidth with smallest gain variation among power amplifiers under 15 GHz, and highest ratio of OP1dB to power stage transistor size is achieved on CMOS process.

Keywords

Bandwidth; Barium; Broadband amplifiers; CMOS integrated circuits; Gain; Power amplifiers; LTCC; QPS; balanced amplifier; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International

Conference_Location

Montreal, QC, Canada

ISSN

0149-645X

Print_ISBN

978-1-4673-1085-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2012.6259513

Filename

6259513