• DocumentCode
    2865350
  • Title

    Punch-through cell for dense bipolar ROMs

  • Author

    Lohstroh, J. ; Slob, A.

  • Author_Institution
    Philips Research Laboratory, Eindhoven, Netherlands
  • Volume
    XXI
  • fYear
    1978
  • fDate
    15-17 Feb. 1978
  • Firstpage
    20
  • Lastpage
    21
  • Abstract
    The punch-through effect, affording fast ROM cells, with projected areas of 250 μm2and smaller - down to 100 μm2- will be discussed. Using the CDI process, cells with selection and detection can be integrated on the same chip.
  • Keywords
    Bipolar transistors; Doping; Epitaxial layers; Laboratories; Prototypes; Read only memory; Schottky diodes; Semiconductor device measurement; Substrates; Symmetric matrices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1978.1155816
  • Filename
    1155816
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2865350