DocumentCode :
2865362
Title :
Large high density CID imagers
Author :
Brown, D. ; Ghezzo, M. ; Sargent, P.
Author_Institution :
General Electric Research/Development Center, Schenectady, NY, USA
Volume :
XXI
fYear :
1978
fDate :
15-17 Feb. 1978
Firstpage :
34
Lastpage :
35
Abstract :
This paper will discuss the fabrication and performance of large (16K, 60K and 78K cells), high density CID self-scanned imager arrays. Small (1.2 × 1.2 mils) overlapping electrode cells using first level polysilicon electrode lines and second level polysilicon or antimony tin oxide electrode lines were utilized.
Keywords :
Capacitance; Circuits; Clocks; Dielectric loss measurement; Electrodes; Etching; Logic arrays; MOSFETs; Metallization; Thermal factors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
Conference_Location :
San Francisco, CA, USA
Type :
conf
DOI :
10.1109/ISSCC.1978.1155817
Filename :
1155817
Link To Document :
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