Title :
Resistive-gate CTD area image sensor
Author_Institution :
Philips Research Laboratories, Eindhoven, The Netherlands
Abstract :
The resistive gate sensor concept that combines high functional density, good blue sensitivity and an effective anti-blooming operating, will be described. A super-8 format 300 × 200 element sensor has been realized.
Keywords :
Charge coupled devices; Charge transfer; Circuits; Electrodes; Electrons; Image sensors; Laboratories; Potential well; Transmission line matrix methods; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1978.1155820
