DocumentCode
2865431
Title
Resistive-gate CTD area image sensor
Author
Heyns, H.
Author_Institution
Philips Research Laboratories, Eindhoven, The Netherlands
Volume
XXI
fYear
1978
fDate
15-17 Feb. 1978
Firstpage
32
Lastpage
33
Abstract
The resistive gate sensor concept that combines high functional density, good blue sensitivity and an effective anti-blooming operating, will be described. A super-8 format 300 × 200 element sensor has been realized.
Keywords
Charge coupled devices; Charge transfer; Circuits; Electrodes; Electrons; Image sensors; Laboratories; Potential well; Transmission line matrix methods; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1978.1155820
Filename
1155820
Link To Document