Title :
Low switching loss, high power gate turn-off thyristors (GTOs) with n-buffer and new anode short structure
Author :
Ogura, Tsuneo ; Kitagawa, Makoto ; Ohashi, H.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
6000-V gate-turn-off thyristors (GTOs) were developed for high-voltage power converters. In order to attain a high blocking voltages simultaneously with low turn-on and turn-off switching losses, a combination of an n-buffer layer and a cylindrical-anode short structure was implemented. This structure is effective in sweeping away excess carriers during turn-off transient without increasing the on-state voltage. The device, fabricated on a 33 mm diameter wafer, can turn off an anode current greater than 700 A at a junction temperature of 125 degrees C.
Keywords :
power convertors; semiconductor switches; thyristors; 125 degC; 6000 V; 700 A; GTO; anode short structure; high blocking voltages; high power gate turn-off thyristors; high-voltage power converters; low switching loss; n-buffer; turn-off transient; Anodes; Inverters; Leakage current; Low voltage; Power system transients; Research and development; Switching converters; Switching loss; Temperature; Thyristors;
Conference_Titel :
Power Electronics Specialists Conference, 1988. PESC '88 Record., 19th Annual IEEE
Conference_Location :
Kyoto, Japan
DOI :
10.1109/PESC.1988.18223
