DocumentCode :
2865569
Title :
VMOS dynamic RAM
Author :
Hoffmann, K. ; Losehand, R. ; Zapf, K.
Author_Institution :
Siemans AG, Munich, Germany
Volume :
XXI
fYear :
1978
fDate :
15-17 Feb. 1978
Firstpage :
156
Lastpage :
157
Abstract :
This paper will discuss the application of VMOS technology in the design of one-transistor 150 μm2memory cells using existing photolithography. The development permits fabrication of a 64K RAM in a 16-pin package.
Keywords :
DRAM chips; Packaging; Parasitic capacitance; Power amplifiers; Power supplies; Random access memory; Read-write memory; Silicon; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
Conference_Location :
San Francisco, CA, USA
Type :
conf
DOI :
10.1109/ISSCC.1978.1155830
Filename :
1155830
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2865569
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