Broadband HBT amplifiers

Author

Krishnan, S. ; Mensa, D. ; Jaganathan, S. ; Mathew, T. ; Wei, Y. ; Rodwell, M.J.W.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

2000

fDate

2000

Firstpage

6

Lastpage

10

Abstract

We report wide-band amplifiers using AlInAs/GaInAs transferred-substrate Heterojunction Bipolar Transistors (HBTs). A distributed amplifier exhibits 11.5 dB gain and 80 GHz bandwidth. Lumped amplifiers exhibit 8.2 dB gain with 80 GHz bandwidth and 18 dB gain with 50 GHz bandwidth and 400 GHz gain-bandwidth product, record for a single-stage amplifier

Keywords

III-V semiconductors; aluminium compounds; bipolar analogue integrated circuits; distributed amplifiers; gallium arsenide; heterojunction bipolar transistors; indium compounds; wideband amplifiers; 11.5 dB; 18 dB; 50 GHz; 8.2 dB; 80 GHz; AlInAs-GaInAs; AlInAs/GaInAs transferred-substrate heterojunction bipolar transistor; broadband HBT amplifier; distributed amplifier; gain-bandwidth product; lumped amplifier; single-stage amplifier; Bandwidth; Broadband amplifiers; Capacitance; Distributed amplifiers; Gain; Geometry; Heterojunction bipolar transistors; Mirrors; Transconductance; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Devices, 2000. Proceedings. 2000 IEEE/Cornell Conference on

Conference_Location

Ithaca, NY

ISSN

1529-3068

Print_ISBN

0-7803-6381-7

Type

conf

DOI

10.1109/CORNEL.2000.902510

Filename

902510