DocumentCode
2865676
Title
A MOS-controlled triac device
Author
Scharf, B. ; Plummer, James
Author_Institution
Stanford University, Satanford, CA, USA
Volume
XXI
fYear
1978
fDate
15-17 Feb. 1978
Firstpage
222
Lastpage
223
Abstract
A merged device - an insulated-gate triac - has been developed and modeled for analysis and design using a circuit analysis program combining MOS and bipolar capabilities. Applications include crosspoint switches, power control and microprocessor interface.
Keywords
Anodes; Cathodes; Circuits; DH-HEMTs; MOSFETs; Resistors; Solid modeling; Switches; Threshold voltage; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1978.1155837
Filename
1155837
Link To Document