Title :
Cryogenic 0.5–13 GHz low noise amplifier with 3 K mid-band noise temperature
Author :
Schleeh, J. ; Wadefalk, N. ; Nilsson, P. Å ; Starski, J.P. ; Alestig, G. ; Halonen, J. ; Nilsson, B. ; Malmros, A. ; Zirath, H. ; Grahn, J.
Author_Institution :
GigaHertz Centre, Department of Microtechnology and Nanoscience (MC2) Chalmers University of Technology, SE-412 96 Göteborg, Sweden
Abstract :
A 0.5–13 GHz cryogenic MMIC low-noise amplifier (LNA) was designed and fabricated using a 130 nm InP HEMT process. A packaged LNA has been measured at both 300 K and 15 K. At 300 K the measured minimum noise temperature was 48 K at 7 GHz. At 15 K the measured minimum noise temperature was 3 K at 7 GHz and below 7 K within the entire 0.5–13 GHz band. The gain was between 34 dB and 40 dB at 300 K and between 38 dB and 44 dB at 4 K.
Keywords :
Bandwidth; Capacitors; HEMTs; Indium phosphide; MMICs; Noise; Radio frequency; Bandwidth; Cryogenic; HEMT; InGaAs; low noise amplifier (LNA);
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2012.6259542
