Title :
4.5 kV 3000 A high power reverse conducting gate turn-off thyristor
Author :
Hashimoto, Osamu ; Takahashi, Yoshikazu ; Kirihata, Humiaki ; Watanabe, Masahide ; Yamada, Osamu
Author_Institution :
Fuji Electr. Corp. Res. & Dev. Ltd., Matsumoto-city, Japan
Abstract :
A 4.5 kV 3000 A high-power reverse conducting gate-turn-off (GTO) thyristor has been developed. The key aspects of the design are electrical separation between the GTO and the diode, the use of a p-i-n junction structure, and optimization of the anode shorting and the n/sup +/ buffer concentration. The electrical characteristics of the device, which achieves 4.5 kV blocking voltage, 3000 A turn-off current and low switching loss are reported.<>
Keywords :
semiconductor switches; thyristors; 3000 A; 4.5 kV; anode shorting optimisation; blocking voltage; electrical characteristics; electrical separation; high power GTO; low switching loss; n/sup +/ buffer concentration; p-i-n junction; reverse conducting gate turn-off thyristor; turn-off current; Anodes; Cathodes; Choppers; Diodes; Inverters; Power electronics; Research and development; Switching loss; Thyristors; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 1988. PESC '88 Record., 19th Annual IEEE
Conference_Location :
Kyoto, Japan
DOI :
10.1109/PESC.1988.18225
