Title :
High indium content InGaAs/GaAs quantum well infrared photodetectors
Author :
Hernando, J. ; Sánchez-Rojas, J.L. ; Tijero, J.M.G. ; Guzmán ; Muñoz, E.
Author_Institution :
Dept. Ingenieria Electron., ETSI Telecomunicacion, Madrid, Spain
Abstract :
Longwavelength InGaAs/GaAs quantum well infrared photodetectors with Indium contents ranging from 30% to 40% have been grown and characterized. It is found that the TE to TM responsivity ratio is lower than 10% in all the cases. Furthermore, a 10% increase in the Indium content from 30% to 40% only causes a very slight increase in the TE to TM ratio, not higher than 3%
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; photodetectors; quantum well devices; InGaAs-GaAs; InGaAs/GaAs quantum well infrared photodetector; TE-TM responsivity ratio; indium content; long-wavelength response; Absorption; Face detection; Gallium arsenide; Gratings; Indium gallium arsenide; Light scattering; Optical polarization; Photodetectors; Tellurium; Temperature;
Conference_Titel :
High Performance Devices, 2000. Proceedings. 2000 IEEE/Cornell Conference on
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-6381-7
DOI :
10.1109/CORNEL.2000.902523
