Title :
A theoretical determination of impact ionization induced gate current in InP HEMTs
Author :
Wu, Shangli ; Anwar, A.F.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Connecticut Univ., Storrs, CT, USA
Abstract :
A theoretical calculation of the gate current in InAlAs/InGaAs/InAlAs HEMTs, which include both the thermionic and tunneling components of the hole current due to impact ionization and the electron Schottky current, is reported. The hole current is a strong function of the ionization coefficient and the gate-bias dependent hole transmission probability. The theoretical gate current is in excellent agreement with experimental data
Keywords :
III-V semiconductors; Schottky effect; high electron mobility transistors; impact ionisation; indium compounds; thermionic electron emission; tunnelling; InAlAs-InGaAs-InAlAs; InP; InP HEMT; electron Schottky current; gate current; hole current; hole transmission probability; impact ionization coefficient; thermionic current; tunneling current; Charge carrier processes; Electron mobility; HEMTs; Impact ionization; Indium gallium arsenide; Indium phosphide; MODFETs; Scattering; Tunneling; Voltage;
Conference_Titel :
High Performance Devices, 2000. Proceedings. 2000 IEEE/Cornell Conference on
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-6381-7
DOI :
10.1109/CORNEL.2000.902529
