DocumentCode :
2866069
Title :
High-frequency characteristics of a via connection
Author :
Berral, Raúl Rodríguez ; Mesa, Francisco ; Jackson, David R.
Author_Institution :
Dept. of Applied Physics 1, University of Seville, Avda. Reina Mercedes s/n, 41012, Spain
fYear :
2012
fDate :
17-22 June 2012
Firstpage :
1
Lastpage :
3
Abstract :
The high-frequency characteristics of a via connection that connects two infinite microstrip lines on either side of a ground plane is examined. The assumption of infinite lines allows for a semi-analytical solution, where the lines are treated essentially in closed form. This results in an accurate solution that captures all of the physics of high-frequency wave excitation on the lines by the via. The scattering parameters of the via can be obtained from this solution, which account for radiation and high frequency effects such as leaky-wave excitation.
Keywords :
Apertures; Geometry; Microstrip; Scattering parameters; Substrates; Surface waves; Via; discontinuity; interconnect; leaky-waves; microstrip; scattering parameters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
ISSN :
0149-645X
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2012.6259563
Filename :
6259563
Link To Document :
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