Title :
High power (> 10 W) RF MEMS switched capacitors
Author :
Zareie, Hosein ; Rebeiz, Gabriel M.
Author_Institution :
University of California San Diego, La Jolla, 92093, USA
Abstract :
This paper presents the design and characterization of a high power RF MEMS switched capacitor. The switch is based on a 4 µm-thick metal plate and four symmetrical springs. The design has low sensitivity to residual stress and stress gradients. S-parameter measurements result in Cu=0.08 pF, Cd=0.55 pF (Cr=6.9), power handling > 10 W, and a switching time of 12–15 µs. The pull-down and release voltages are stable to +/−3 V over 20–120 C. The design can be arrayed for N-bit switched-capacitor networks.
Keywords :
Degradation; Micromechanical devices; Radio frequency; Switches; High Power; RF MEMS; Switches;
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2012.6259564
