Title :
Growth of InN for heterojunction field effect transistor applications by plasma enhanced MBE
Author :
Schaff, William J. ; Lu, Hai ; Hwang, Jeonghyun ; Wu, Hong
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
InN is predicted to exhibit higher saturation velocity than GaN for High Electron Mobility Transistor (HFET) applications. No field effect transistors have yet been made with InN channels because, to date, InN has been only prepared with undoped electron concentrations near 1×1020 cm-3. In this work growth of InN by the migration enhanced epitaxy (MEE) variation of the molecular beam epitaxy (MBE) technique has been performed. Electron densities down to lower 1018 cm-3 have been obtained over a range of growth conditions with 300 K mobilities in the range of 300-500 cm2 /Vs
Keywords :
III-V semiconductors; electron density; electron mobility; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; plasma deposited coatings; semiconductor growth; wide band gap semiconductors; InN; electron concentration; electron mobility; heterojunction field effect transistor; high electron mobility transistor; indium nitride; migration enhanced epitaxy; plasma enhanced MBE growth; saturation velocity; Electron mobility; FETs; Gallium nitride; HEMTs; Heterojunctions; MODFETs; Molecular beam epitaxial growth; Piezoelectric polarization; Plasma applications; Substrates;
Conference_Titel :
High Performance Devices, 2000. Proceedings. 2000 IEEE/Cornell Conference on
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-6381-7
DOI :
10.1109/CORNEL.2000.902542
