Title :
SOI-based integrated circuits for high-temperature power electronics applications
Author :
Greenwell, R.L. ; McCue, B.M. ; Zuo, L. ; Huque, M.A. ; Tolbert, L.M. ; Blalock, B.J. ; Islam, S.K.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Tennessee, Knoxville, TN, USA
Abstract :
The growing demand for hybrid electric vehicles (HEVs) has increased the need for high-temperature electronics that can operate at the extreme temperatures that exist under the hood. This paper presents a high-voltage, high-temperature SOI-based gate driver for SiC FET switches. The gate driver is designed and implemented on a 0.8-micron BCD on SOI process. This gate driver chip is intended to drive SiC power FETs for DC-DC converters and traction drives in HEVs. To this end, the gate driver IC has been successfully tested up to 200°C. Successful operation of the circuit at this temperature with minimal or no heat sink, and without liquid cooling, will help to achieve higher power-to-volume as well as power-to-weight ratios for the power electronics modules in HEVs.
Keywords :
DC-DC power convertors; automotive electronics; drives; field effect transistors; hybrid electric vehicles; silicon-on-insulator; traction; BCD process; DC-DC converters; FET switches; HEV; SOI process; SOI-based integrated circuits; Si; high- temperature SOI-based gate driver; high-temperature automotive electronic requirements; high-temperature power electronics applications; hybrid electric vehicles; power FET; temperature 200 C; traction drives; Capacitors; Circuit faults; Driver circuits; Logic gates; Regulators; Switches; Voltage control;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2011 Twenty-Sixth Annual IEEE
Conference_Location :
Fort Worth, TX
Print_ISBN :
978-1-4244-8084-5
DOI :
10.1109/APEC.2011.5744692
