Title :
Technology development for GaN/AlGaN HEMT hybrid and MMIC amplifiers on semi-insulating SiC substrates
Author :
Sheppard, S.T. ; Pribble, W.L. ; Emerson, D.T. ; Ring, Z. ; Smith, R.P. ; Allen, S.T. ; Milligan, J.W. ; Palmour, J.W.
Author_Institution :
Cree Inc., Durham, NC, USA
Abstract :
The GaN/AlGaN-on-SiC HEMT is being pursued as the active element on which to base next-generation high-frequency power amplifiers. Advances in III-nitride growth and processing techniques for commercial production of optoelectronic devices are being applied to advance the state-of-the-art for GaN/AlGaN HEMTs. Demonstrations of extremely high power density and total RF power from these unipolar, high-frequency transistors adequately demonstrate their potential for superior power performance over GaAs-based devices at 10 GHz. In order to satisfy the requirements for high-power, wide-bandwidth amplifiers, the next level of innovation for this technology is to develop monolithic microwave integrated circuits (MMICs). The latest developments have allowed us to demonstrate the first operational MMIC amplifier in the GaN-on-SiC HEMT platform
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; field effect MMIC; gallium compounds; wide band gap semiconductors; wideband amplifiers; 10 GHz; GaN-AlGaN; GaN/AlGaN HEMT; MMIC amplifier; RF power; SiC; active element; high-frequency high-power wideband amplifier; hybrid amplifier; power density; semi-insulating SiC substrate; unipolar transistor; Aluminum gallium nitride; Broadband amplifiers; Gallium nitride; HEMTs; High power amplifiers; MMICs; Optoelectronic devices; Production; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
High Performance Devices, 2000. Proceedings. 2000 IEEE/Cornell Conference on
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-6381-7
DOI :
10.1109/CORNEL.2000.902543
