Title :
Validation of an analytical large signal model for AlGaN/GaN HEMT´s on SiC substrates
Author :
Green, Bruce M. ; Kim, Hyungtak ; Tilak, Vinayak ; Shealy, James R. ; Smart, Joseph A. ; Eastman, Lester F.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
An analytical nonlinear model describing AlGaN/GaN HEMT´s grown on SiC substrates has been extracted based on measured device data. The model accounts for dispersion in transconductance and output conductance present in the devices. Model validations based on comparisons with 16 GHz power sweep data show good agreement between the model predictions of a 3.3 W/mm power density (18% PAE) and the measurements for these devices
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device models; wide band gap semiconductors; 16 GHz; 18 percent; AlGaN-GaN; AlGaN/GaN HEMT; SiC; SiC substrate; analytical model; nonlinear large-signal characteristics; output conductance; power density; power-added efficiency; transconductance; Aluminum gallium nitride; Analytical models; Data mining; Density measurement; Gallium nitride; HEMTs; Predictive models; Signal analysis; Silicon carbide; Transconductance;
Conference_Titel :
High Performance Devices, 2000. Proceedings. 2000 IEEE/Cornell Conference on
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-6381-7
DOI :
10.1109/CORNEL.2000.902544
