Power limits of polarization-induced AlGaN/GaN HEMT´s

Author

Eastman, Lester F. ; Green, Bruce ; Smart, Joseph ; Tilak, Vinayak ; Chumbes, Eduardo ; Kim, Hyungtak ; Prunty, Thomas ; Weimann, Nils ; Dimitrov, Roman ; Ambacher, Oliver ; Schaff, William J. ; Shealy, J. Richard

Author_Institution

Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA

fYear

2000

fDate

2000

Firstpage

242

Lastpage

246

Abstract

The present and predicted limits on microwave power performance of undoped AlGaN/GaN HEMTs are presented, based on measured frequency response and drain-source breakdown voltage, both as functions of gate length. The spontaneous and piezoelectric polarization that induce the 2DEG in these HEMTs are covered. Process methods, including Si₃N₄ passivation are included. Thermal simulation results are shown for heat dissipation that limits channel temperature to 300°C. Microwave cw power density limits of 12.5 W/mm at 10 GHz are predicted for class A operation on thick SiC substrates

Keywords

III-V semiconductors; aluminium compounds; dielectric polarisation; gallium compounds; microwave field effect transistors; microwave power transistors; passivation; piezoelectric semiconductors; power HEMT; semiconductor device breakdown; two-dimensional electron gas; wide band gap semiconductors; 10 GHz; 2DEG; 300 C; AlGaN-GaN; AlGaN/GaN HEMT; Si₃N₄; Si₃N₄ passivation; SiC; SiC substrate; channel temperature; class A operation; drain-source breakdown voltage; frequency response; heat dissipation; microwave power transistor; piezoelectric polarization; spontaneous polarization; thermal simulation; Aluminum gallium nitride; Electromagnetic heating; Frequency measurement; Gallium nitride; HEMTs; Length measurement; MODFETs; Microwave measurements; Piezoelectric polarization; Power measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Devices, 2000. Proceedings. 2000 IEEE/Cornell Conference on

Conference_Location

Ithaca, NY

ISSN

1529-3068

Print_ISBN

0-7803-6381-7

Type

conf

DOI

10.1109/CORNEL.2000.902545

Filename

902545