Title :
GaAs power MEWFETs with a simplified recess structure
Author :
Hasegawa, Fumihiro ; Takayama, Yoichiro ; Higashisaka, A. ; Furutsuka, T. ; Honjo, Kazuhiko
Author_Institution :
Nippon Electric Company, Ltd., Kawasaki, Japan
Abstract :
A simplified recess structure to reduce the drain breakdown voltage of GaAs power FETs will be covered. The structure, with an internal matching network has delivered an output power of 7W at 5.6GHz.
Keywords :
Breakdown voltage; Electron devices; Epitaxial layers; FETs; Fabrication; Gallium arsenide; Laboratories; MESFETs; Microwave devices; Production;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1978.1155865
